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Título del libro: 2018 Ieee 7th World Conference On Photovoltaic Energy Conversion, Wcpec 2018 - A Joint Conference Of 45th Ieee Pvsc, 28th Pvsec And 34th Eu Pvsec
Título del capítulo: Deposition and characterization of SnS:Cu thin films by ultrasonic spray pyrolysis technique to applications in photovoltaic devices

Autores UNAM:
GUILLERMO SANTANA RODRIGUEZ; AARON SANCHEZ JUAREZ; CARLOS ALVAREZ MACIAS;

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Autores externos:

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Idioma:
Inglés

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Año de publicación:
2018

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Palabras clave:

Carrier concentration; Copper compounds; Deposition; Doping (additives); Energy conversion; Energy gap; Hall mobility; IV-VI semiconductors; Layered semiconductors; Materials properties; Optical properties; Photoelectrochemical cells; Photovoltaic cells; Semiconductor doping; Spray pyrolysis; Structural properties; Sulfur compounds; Thin films; Ultrasonic applications; Optoelectronic properties; Photovoltaic applications; Structural characteristics; Tin sulfide; Transmittance and reflectances; Ultrasonic spray pyrolysis; Ultrasonic spray pyrolysis technique; X-ray diffraction studies; Tin compounds

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Resumen:

Tin sulfide (SnS) thin films have attracted attention for its great potential for photovoltaic applications as absorber material due to its optical properties, stability and structural characteristics, however, the efficiency of photovoltaic structure based undoped SnS hasbeen found to be low due to their low conductivity. In this work, we analyzed the influence doping of copper (Cu) on SnS (SnS:Cu) thin films and how are affected its structural and optoelectronic properties. The SnS:Cu thin films were obtained by ultrasonic spray pyrolysis technical at different Cu concentrations (0, 2, 5 and 10 %), controlling the other deposit parameters. X-Ray Diffraction studies show changes in the structure as increasing the level of doped going from being orthorhombic to cubic. We used transmittance and reflectance versus wavelengthmeasurements to determine the energy band gap. We found an increment in the band gap when the doping concentration was increased. From Hall-Van der Pauw effect, the electrical properties (resistivity, carrier concentration, mobility) were measured. We observe a decrement of the resistivity with the increment on the doping concentration. © 2018 IEEE.

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Entidades citadas de la UNAM:

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Fuente:


ISBN:
9781538685297
Editorial:
Institute of Electrical and Electronics Engineers Inc.

Tipo de producto:
Conference Paper

DOI:
10.1109/PVSC.2018.8548268