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Título del libro: 2021 18th International Conference On Electrical Engineering, Computing Science And Automatic Control (cce 2021)
Título del capítulo: Effect of argon plasma treatment on electronic properties of doped hydrogenated Silicon thin films for photovoltaic applications

Autores UNAM:
ATEET DUTT;
Autores externos:
Idioma:
Año de publicación:
2021
Palabras clave:

Microcrystalline Silicon; AFM; Plasma treatment; PECVD; Thin Films

Resumen:

Argon plasma treatment was performed on doped silicon thin films using a plasma-enhanced chemical vapor deposition (PECVD) process under a microwave frequency of 2.45 GHz. Initially, deposited silicon thin films were annealed for 1 hour under vacuum and then these films were plasma treated under a gaseous environment of argon using optimized conditions (power, pressure) for 30 minutes time duration. These as-deposited, annealed and plasma-treated films were characterized using atomic force microscopy (AFM) and electrical conductivity extensively as a function of temperature measured in vacuum. The activation energy was also estimated. Argon plasma treated films show a higher value of conductivity with the improved value of activation energy as compared to annealed and as-deposited films. From these inferences; it can be concluded that the plasma treatment can be an in-situ tool for improving the electronic properties of silicon thin films by allowing probable surface atom rearrangement. This may lead to a smoother interface for devices like hetero-junction solar cells which was discussed with a typical model.

Entidades citadas de la UNAM:
Fuente:


ISBN:
9781665400299
Editorial:
IEEE

Tipo de producto:
Proceedings Paper



DOI:
10.1109/CCE53527.2021.9633065