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SIIA Público
SISTEMA INTEGRAL DE INFORMACIÓN ACADÉMICA - PÚBLICO
Título del libro: 2021 18th International Conference On Electrical Engineering, Computing Science And Automatic Control (cce 2021) Título del capítulo: Photoluminescence properties of SiOxCy-films deposited under argon atmosphere and Si-based organometallic precursor by O-Cat-CVD
We report the deposition of silicon-based photoluminescent thin-films
i.e. silicon oxycarbide (SiOxCy), with the help of organic catalytic
chemical vapor deposition (O-Cat CVD) technique. Tetra-ethyl
orthosilicate (TEOS) material was used as the single source
organometallic precursor while tungsten (W) filament was exploited as
catalyst during deposition. The deposition chamber worked under an
atmosphere of argon (Ar) gas while the deposition time was 30 minutes.
In this work, the influence of the argon flow was evaluated on the
photoluminescence (PL) properties of the thin films which was varied
from 20-60 sccm. Different bonding states and chemical states of the
deposited films were analyezed by Fourier transform infrared
spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS)
techniques, respectively. Through FTIR and XPS measurements, the
formation of SiOxCy thin films has been confirmed. The thickness of the
films and the refractive index were investigated from an ellipsometer at
constant wavelength (632.8 nm) with variable angle measurements. The
intense PL emissions were observed in a wide spectra of visible region
for as-deposited films. The possible origin of PL emissions can be
either from the incorporation of different luminescence-related defect
centers and/or quantum confinement effect in the SiOxCy matrix.
