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Título del libro: 2009 6th International Conference On Electrical Engineering, Computing Science And Automatic Control, Cce 2009
Título del capítulo: Deposition and characterization of ZnO:Al thin films by ultrasonic spray pyrolysis

Autores UNAM:
VELUMANI SUBRAMANIAM;

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Autores externos:

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Idioma:
Inglés

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Año de publicación:
2009

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Palabras clave:

Al-doped ZnO; Aluminum acetylacetonate; AZO films; Crystallographic directions; Different substrates; Doped films; Electrical resistivity; Field emission scanning electron microscopy; Film morphology; Grain size; Hall measurements; Hexagonal wurtzite structure; Low density; Native defect; Optical and electrical properties; PL spectra; Polycrystalline; Substrate temperature; Transmission measurements; Ultrasonic spray pyrolysis; Visible wavelengths; XRD; Zinc acetate; ZnO:Al films; ZnO:Al thin films; Aluminum; Automation; Control; Deposition; Electric conductivity; Electrical engineering; Field emission; Field emission microscopes; Methanol; Optical emission spectroscopy; Optical properties; Process control; Scanning electron microscopy; Spray pyrolysis; Substrates; Thin films; Ultrasonic testing; Ultrasonics; X ray diffraction; X ray diffraction analysis; Zinc; Zinc oxide; Zinc sulfide; Optical films

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Resumen:

Al-doped ZnO (AZO) thin films were prepared using simple, flexible and cost-effective ultrasonic spray pyrolysis (USP) technique at different substrate temperatures. Zinc acetate dehydrate (Zn (CH3COO) 2.2H2O) and Aluminum acetylacetonate (C15H 21AlO6) were used as precursors and the solvent was a mixture of de-ionized water, methanol and acetic acid. Substrate temperatures are varied for 3 at% Al-doped film between 450° C to 500° C. The film's structural, optical and electrical properties were investigated by X- Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV-VIS transmittance spectroscopy, Photoluminescence (PL) and Hall measurements. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. Grain sizes varied from 21.3 to 25.3 nm based on substrate temperature. FESEM images revealed that the film morphology is strongly affected by the substrate temperature. Transmission measurements showed that for visible wavelength (400-700nm), the AZO films have an average transmission of 75%. Optical band gap of AZO films is varied from 3.26 to 3.29 eV with the increase in substrate temperature. PL spectra showed ZnO:Al films with a low density of native defects. Resistivity of the films varied from 0.7 Ohm-cm to 2×10 -2 Ohm-cm. Minimum electrical resistivity was obtained for film deposited at 475° C with film thickness of 602nm.

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Entidades citadas de la UNAM:

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Fuente:


ISBN:
9781424446896
Editorial:
IEEE Computer Society

Tipo de producto:
Conference Paper

DOI:
10.1109/ICEEE.2009.5393563