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Título del libro: 2009 6th International Conference On Electrical Engineering, Computing Science And Automatic Control, Cce 2009
Título del capítulo: Effect of thickness on the structural, optical and electrical properties of MW-CBD CdZnS thin films

Autores UNAM:
VELUMANI SUBRAMANIAM;

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Autores externos:

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Idioma:
Inglés

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Año de publicación:
2009

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Palabras clave:

Ammonium sulphate; Band gaps; Cadmium sulphate; CdZnS; Chemical-bath deposition; Concentration of; Deposited films; Dislocation densities; Grain size; Hexagonal structures; Microwave-assisted; Optical and electrical properties; Optical transmission measurements; Rapid synthesis; SEM image; Size and shape; Van der Pauw technique; Wavelength regions; Zinc sulphate; Zinc sulphide; Ammonium compounds; Automation; Cadmium; Control; Electric properties; Electric resistance; Electrical engineering; Light transmission; Microwaves; Optical properties; Optoelectronic devices; Process control; Synthesis (chemical); Thin films; Thioureas; Urea; X ray diffraction; Zinc; Zinc sulfide; Deposition

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Resumen:

Thin films of CdZnS have found extensive applications in various optical, electrical and optoelectronic devices. In the present work CdZnS (Cadmium Zinc Sulphide) thin films have been deposited by a simple, inexpensive and rapid synthesis route, microwave-assisted chemical bath deposition (MW-CBD).The bath solution is composed of Cadmium Sulphate, Zinc Sulphate, thiourea, ammonium Sulphate and ammonia. The concentration of ZnSO4 is maintained at Y= [ZnSO4]/ {[CdSO4] + [ZnSO4]} for Y=0.3. The deposition has been carried out for five different radiation time from 60s to 180s, in steps of 30s. X-ray diffraction (XRD) indicates the hexagonal structure (002) peak at 2? =26.59° for the as-deposited CdZnS thin films. The grain size, dislocation density and strain in the deposited films have been determined. SEM image gives the morphology, size and shape of particles in the deposited CdZnS thin films. EDX results show that the composition of the film is maintained irrespective of radiation time. Optical transmission measurements reveal that the films show good transparency over 80% in the wavelength region of 500-1100nm. The band gap of CdZnS thin films is found to be around 2.6 eV. Sheet resistance of the samples calculated by using Van der Pauw technique is in the order of 106O/Sq. Resistivity of the films is in the order of 101 to 102 O-Cm.

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Entidades citadas de la UNAM:

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Fuente:


ISBN:
9781424446896
Editorial:
IEEE Computer Society

Tipo de producto:
Conference Paper

DOI:
10.1109/ICEEE.2009.5393317