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Título del libro: 2021 18th International Conference On Electrical Engineering, Computing Science And Automatic Control (cce 2021)
Título del capítulo: Optoelectronic properties of Sb2S3thin films grown by Physical Vapor Deposition

Autores UNAM:
JOSE SANTOS CRUZ;
Autores externos:

Idioma:

Año de publicación:
2021
Palabras clave:

Annealing; Antimony compounds; Carrier concentration; Energy gap; Hall mobility; Physical vapor deposition; Semiconducting films; Substrates; Thin films; Ultraviolet visible spectroscopy; Annealing temperatures; Antimony(III); Effect of annealing; Glass substrates; Optoelectronics property; Physical vapour deposition; Sulfide thin films; Thin-films; Ultraviolet-visible spectroscopy; Vapor-deposition techniques; Sulfur compounds


Resumen:

Antimony (III) sulfide thin films are prepared on glass substrates by physical vapor deposition technique. Then, the films are annealed at different temperatures from 250 to 400°C with N2 and N2-S atmosphere. The effect of annealing temperature on the optoelectronic properties is investigated. The films are characterized by ultraviolet-visible spectroscopy, Raman spectroscopy, XRD, EDS analysis and Hall effect. The film annealed at 300°C in an N2 atmosphere exhibited the best condition with an initial thickness of 400 nm and band gap of 1.76 eV. Also, stibnite phase, the charge carrier concentration of 1.25\times 10{12}\ cm{-3} with a p-Type conductivity, the resistivity of 3.9\times 10{5} \Omega-\text{cm}, and mobility of 18.11\ \text{cm}{2}\mathrm{V}{-1}\mathrm{s}{-1} are obtained. © 2021 IEEE.


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