BRUNO ULLRICH



DATOS GENERALES
Nombre completo   BRUNO ULLRICH
Máximo nivel de estudios   DOCTORADO
Antigüedad académica en la UNAM   4 años
NOMBRAMIENTOS
Último  INVESTIGADOR TITULAR C TC No Definitivo
Instituto de Ciencias Físicas
INVESTIGADOR TITULAR C TC No Definitivo
Instituto de Ciencias Físicas
Desde 16-05-2012 hasta 31-03-2016
ESTIMULOS, PROGRAMAS, PREMIOS Y RECONOCIMIENTOS
* SNI II2015 - 2017
INFORMACIÓN DE PUBLICACIONES
Firmas  
Ullrich B. Ullrich B.M. Ullrich B.Manfred Ullrich Bruno Ullrich, B. Ullrich, Bruno
ID's SCOPUS  
7004407922
Áreas de conocimiento  
Crystallography Chemistry, multidisciplinary Chemistry, physical Energy & fuels Engineering, electrical & electronic
Engineering, electrical and electronic Engineering, multidisciplinary Instruments and instrumentation Materials science Materials science, ceramics
Materials science, coating & films Materials science, coatings & films Materials science, coatings and films Materials science, multidisciplinary Metallurgy and metallurgical engineering
Optics Physics, applied Physics, atomic, molecular & chemical Physics, condensed matter Physics, multidisciplinary
Applied mathematics Atomic and molecular physics, and optics Condensed matter physics Chemical Engineering (miscellaneous) Chemistry (miscellaneous)
Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Energy (miscellaneous) Engineering (miscellaneous) Instrumentation
Materials Chemistry Materials Science (miscellaneous) Mechanical Engineering Medicine (miscellaneous) Metals and Alloys
Physics and Astronomy (miscellaneous) Surfaces, Coatings and Films
Coautorías con entidades de la UNAM  
  • Instituto de Física
  • Instituto de Geofísica
  • Instituto de Ciencias Físicas
 Revistas en las que ha publicado  (64):
  1. ACS APPLIED MATERIALS & INTERFACES, Estados Unidos America (2015)
  2. ADVANCED MATERIALS, Alemania (1992)
  3. AIP ADVANCES, Estados Unidos America (2012, 2014, 2017, 2018, 2020)
  4. American Society Of Mechanical Engineers (paper), (1990)
  5. Applied Physics A Solids And Surfaces, (1988, 1991)
  6. APPLIED PHYSICS LETTERS, Estados Unidos America (1980, 1988, 1989, 1990, 1995, 1996, 1998, 2002, 2003, 2005, 2008, 2010, 2011, 2013, 2014, 2015, 2016, 2021)
  7. APPLIED SCIENCES-BASEL, Suiza (2019)
  8. APPLIED SURFACE SCIENCE, Países Bajos (2005)
  9. CANADIAN JOURNAL OF PHYSICS, Canada (1993)
  10. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Estados Unidos America (2001)
  11. CHEMICAL PHYSICS, Países Bajos (2002)
  12. Ieee International Symposium On Compound Semiconductors, Proceedings, (2000)
  13. IEEE JOURNAL OF QUANTUM ELECTRONICS, Estados Unidos America (2001)
  14. Ieee Nonlinear Optics: Materials, Fundamentals And Applications - Conference Proceedings, (1994)
  15. JAPANESE JOURNAL OF APPLIED PHYSICS, Japón (1991, 1992, 1993, 1994, 1995, 1996, 1997, 1998)
  16. JOURNAL OF APPLIED PHYSICS, Estados Unidos America (1991, 1997, 1998, 2000, 2003, 2004, 2005, 2006, 2007, 2009, 2010, 2014)
  17. JOURNAL OF CRYSTAL GROWTH, Países Bajos (1990, 1992, 1994, 2000, 2009)
  18. JOURNAL OF CHEMICAL PHYSICS, Estados Unidos America (2002)
  19. JOURNAL OF LUMINESCENCE, Países Bajos (1991, 2000, 2013)
  20. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Países Bajos (2007)
  21. JOURNAL OF NON-CRYSTALLINE SOLIDS, Países Bajos (2006)
  22. JOURNAL OF PHYSICAL CHEMISTRY B, Estados Unidos America (2003)
  23. JOURNAL OF PHYSICAL CHEMISTRY C, Estados Unidos America (2010)
  24. JOURNAL OF PHYSICS D-APPLIED PHYSICS, Reino Unido (2005)
  25. JOURNAL OF PHYSICS-CONDENSED MATTER, Reino Unido (2001, 2007, 2008)
  26. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, Estados Unidos America (1991, 2009)
  27. Journal Of Vacuum Science & Technology, (1980)
  28. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Estados Unidos America (2006)
  29. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Estados Unidos America (2010, 2012)
  30. Materials, Suiza (2021)
  31. MATERIALS CHEMISTRY AND PHYSICS, Suiza (2013)
  32. MATERIALS LETTERS, Países Bajos (2009)
  33. Materials Research Society Symposium Proceedings, Estados Unidos America (1997, 2001, 2002, 2011, 2012)
  34. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Países Bajos (1994, 1995, 1997, 1998, 1999)
  35. Materials Science Forum, Suiza (1995)
  36. MICROELECTRONIC ENGINEERING, Países Bajos (1998)
  37. Molecular Crystals And Liquid Crystals Science And Technology Section B: Nonlinear Optics, (1993, 1994, 1995)
  38. Nanotechnology, Reino Unido (2013)
  39. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Países Bajos (1985)
  40. NUOVO CIMENTO D, (1986)
  41. OPT REV, Japón (1995, 1997)
  42. OPTICAL ENGINEERING, Estados Unidos America (2002, 2003)
  43. OPTICAL MATERIALS EXPRESS, Estados Unidos America (2015)
  44. OPTICS EXPRESS, Estados Unidos America (2001)
  45. OPTICS LETTERS, Estados Unidos America (1999, 2002, 2010, 2013, 2015, 2022)
  46. OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIII, Estados Unidos America (1999, 2002, 2003, 2004, 2005, 2006, 2008, 2009, 2010, 2012, 2013, 2017)
  47. OPTO-ELECTRON REV, Polonia (2006)
  48. Pacific Rim Conference On Lasers And Electro-Optics, Cleo - Technical Digest, (1997, 1999)
  49. PHYSICA B-CONDENSED MATTER, Países Bajos (1993)
  50. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Países Bajos (2006)
  51. PHYSICA SCRIPTA, Suecia (1989, 1994, 1995, 2014, 2015, 2016, 2019)
  52. Physica Status Solidi C-Current Topics in Solid State Physics, Alemania (2007)
  53. PHYSICAL REVIEW B, Estados Unidos America (1988, 1989, 2002)
  54. REVIEW OF SCIENTIFIC INSTRUMENTS, Estados Unidos America (2012)
  55. RSC ADVANCES, Reino Unido (2015, 2016)
  56. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Reino Unido (2001, 2002, 2004, 2006, 2007, 2012)
  57. SENSORS AND ACTUATORS A-PHYSICAL, Suiza (2015)
  58. SOLAR ENERGY MATERIALS AND SOLAR CELLS, Países Bajos (2009)
  59. SOLID STATE COMMUNICATIONS, Estados Unidos America (1997, 1998, 1999, 2000)
  60. SUPERLATTICES AND MICROSTRUCTURES, Estados Unidos America (1989)
  61. SURFACE & COATINGS TECHNOLOGY, Suiza (1999)
  62. SURFACE SCIENCE, Países Bajos (2006)
  63. SYNTHETIC METALS, Suiza (1992)
  64. Thin Solid Films, Suiza (1989, 1997, 1998, 2000, 2001, 2003, 2007, 2010, 2014)


Descargar PDF

Documentos indexados (WoS y Scopus)

# Título del documento Autores Año Revista Fuente Citas WoS Citas Scopus
1Microscopic description and uncertainty of the Stokes shift in semiconductorsCoautor y autor de correspondencia: Ullrich B., Bhowmick M., Xi H.2022OPTICS LETTERSWoS-id: 000783370300010
Scopus-id: 2-s2.0-85128447445
22
2Optical bandgap definition via a modified form of urbach?s ruleCoautor y autor de correspondencia: Ullrich B., Bhowmick M., Xiz H.2021MaterialsWoS-id: 000638688300001
Scopus-id: 2-s2.0-85103392522
1116
3All-optical switch based on PbS quantum dotsCoautor: Ullrich B., Bhowmick M., Singh A.K., Barik P., et al.2021APPLIED PHYSICS LETTERSWoS-id: 000717961000003
Scopus-id: 2-s2.0-85119209543
66
4Correction of the Fan factor1ᵉʳ autor: Ullrich B., Xi H., Bhowmick M.2020AIP ADVANCESWoS-id: 000520976700001
Scopus-id: 2-s2.0-85081886818
10
5Mathematical assessment of the thermal band gap variation of semiconductorsCoautor: Ullrich B., Bhowmick M., Xi H., Androulidaki M.2019PHYSICA SCRIPTAWoS-id: 000466272500001
Scopus-id: 2-s2.0-85069037405
99
6Optical properties of PbS quantum dots deposited on glass employing a supercritical CO2 fluid process1ᵉʳ autor: Ullrich B., Wang J.2019APPLIED SCIENCES-BASELWoS-id: 000498058600092
Scopus-id: 2-s2.0-85075191079
23
7The thermo-electric nature of the Debye temperature2ᵒ autor: Ullrich B., Bhowmick M., Androulidaki M., Xi H.2018AIP ADVANCESWoS-id: 000433954000116
Scopus-id: 2-s2.0-85047558983
55
8Relation between Debye temperature and energy band gap of semiconductors1ᵉʳ autor: Ullrich, B., Bhowmick, M., Xi, H.2017AIP ADVANCESWoS-id: 000400396100030
Scopus-id: 2-s2.0-85017525163
1314
9Luminescence and transient lifetime studies for energy transfer of PbS QD films2ᵒ autor: Ullrich B., Wang J.S., Dass C.K., Das A., et al.2017OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000423024700012
Scopus-id: 2-s2.0-85033719380
00
10Photoluminescence limiting of colloidal PbS quantum dots1ᵉʳ autor: Ullrich, B., Xi, H., Wang, J. S.2016APPLIED PHYSICS LETTERSWoS-id: 000373057000046
Scopus-id: 2-s2.0-84959179884
66
11Optical properties of a scorpion (Centruroides limpidus)1ᵉʳ autor: Ullrich, Bruno, Duckworth, Robyn M., Singh, Akhilesh K., Barik, Puspendu, et al.2016PHYSICA SCRIPTAWoS-id: 000375598300023
Scopus-id: 2-s2.0-84964800121
33
12Luminescence studies for energy transfer of lead sulfide QD films2ᵒ autor: Ullrich B., Wang J.S., Das A., Wai C.M., et al.2016RSC ADVANCESWoS-id: 000377257000051
Scopus-id: 2-s2.0-84971207182
88
13Host matrix impact on Er3+ upconversion emission and its temperature dependenceCoautor: Ullrich B., Singh A.K., Shahi P.K., Rai S.B.2015RSC ADVANCESWoS-id: 000349524700039
Scopus-id: 2-s2.0-84922739459
4749
14Lanthanide complexes for temperature sensing, UV light detection, and laser applicationsCoautor: Ullrich B., Shahi P.K., Singh A.K., Rai S.B.2015SENSORS AND ACTUATORS A-PHYSICALWoS-id: 000349573400030
Scopus-id: 2-s2.0-84920266768
5961
15Inherent photoluminescence Stokes shift in GaAs1ᵉʳ autor: Ullrich B., Singh A.K., Barik P., Xi H., et al.2015OPTICS LETTERSWoS-id: 000355630200036
Scopus-id: 2-s2.0-84959420305
1921
16Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dotsCoautor: Ullrich B., Yue F., Tomm J.W., Kruschke D., et al.2015APPLIED PHYSICS LETTERSWoS-id: 000358530300022
Scopus-id: 2-s2.0-84937064830
911
17Revelation of the Technological Versatility of the Eu(TTA) 3 Phen Complex by Demonstrating Energy Harvesting, Ultraviolet Light Detection, Temperature Sensing, and Laser ApplicationsCoautor: Ullrich B., Shahi P.K., Singh A.K., Singh S.K., et al.2015ACS APPLIED MATERIALS & INTERFACESWoS-id: 000360322000007
Scopus-id: 2-s2.0-84940495316
99106
18Magneto-optical reflectance and absorbance of PbS quantum dotsCoautor y autor de correspondencia: Ullrich B., Barik P., Singh A.K.2015PHYSICA SCRIPTAWoS-id: 000362492500031
Scopus-id: 2-s2.0-84940749329
12
19Photo-dynamic Burstein-Moss doping of PbS quantum dots in solution by single and twophoton optical pumping1ᵉʳ autor: Ullrich B., Barik P., Singh A.K., García-Ramírez E.V., et al.2015OPTICAL MATERIALS EXPRESSWoS-id: 000364467700005
Scopus-id: 2-s2.0-84947736181
68
20Atomic transition region at the crossover between quantum dots to molecules1ᵉʳ autor: Ullrich B., Antillón A., Bhowmick M., Wang J.S., et al.2014PHYSICA SCRIPTAWoS-id: 000331209200014
Scopus-id: 2-s2.0-84893360768
910
21Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition1ᵉʳ autor: Ullrich B., Ariza-Flores D., Bhowmick M.2014Thin Solid FilmsWoS-id: 000334314100003
Scopus-id: 2-s2.0-84898788484
2223
22Photoinduced band filling in strongly confined colloidal PbS quantum dots1ᵉʳ autor: Ullrich B., Xi H., Wang J.S.2014JOURNAL OF APPLIED PHYSICSWoS-id: 000338106000011
Scopus-id: 2-s2.0-84903207498
89
23Magneto-optical controlled transmittance alteration of PbS quantum dots by moderately applied magnetic fields at room temperatureCoautor y autor de correspondencia: Ullrich B., Singh A.K., Barik P.2014APPLIED PHYSICS LETTERSWoS-id: 000346643600048
Scopus-id: 2-s2.0-84919668536
56
24Photoluminescence lineshape of ZnO1ᵉʳ autor: Ullrich B., Singh A.K., Bhowmick M., Barik P., et al.2014AIP ADVANCESWoS-id: 000347170100003
Scopus-id: 2-s2.0-84907855762
1111
25All-optical tuning of the Stokes shift in PbS quantum dots1ᵉʳ autor: Ullrich B., Wang J.S.2013APPLIED PHYSICS LETTERSWoS-id: 000315596700017
Scopus-id: 2-s2.0-84874540598
99
26Comment on 'Temperature dependent optical properties of PbS nanocrystals'1ᵉʳ autor: Ullrich B., Wang J.S., Brown G.J.2013NanotechnologyWoS-id: 000320775500013
Scopus-id: 2-s2.0-84879518278
66
27Morphology and energy transfer in PbS quantum dot arrays formed with supercritical fluid deposition2ᵒ autor: Ullrich B., Wang J.S., Brown G.J., Wai C.M.2013MATERIALS CHEMISTRY AND PHYSICSWoS-id: 000322149700030
Scopus-id: 2-s2.0-84879987054
1415
28Stability studies of lead sulfide colloidal quantum dot films on glass and GaAs substratesCoautor: Ullrich B., Wang J.S., Steenbergen E.H., Smith H.E., et al.2013OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000322967200010
Scopus-id: 2-s2.0-84878293056
34
29Impact of laser excitation variations on the photoluminescence of PbS quantum dots on GaAs1ᵉʳ autor: Ullrich B., Wang J.S.2013JOURNAL OF LUMINESCENCEWoS-id: 000323912400105
Scopus-id: 2-s2.0-84879825985
911
30Photocurrent limit in nanowires1ᵉʳ autor: Ullrich B., Xi H.2013OPTICS LETTERSWoS-id: 000327142600046
Scopus-id: 2-s2.0-84887945597
1314
31Note: Phase sensitive detection of photoluminescence with Fourier transform spectroscopy1ᵉʳ autor: Ullrich B., Brown G.J.2012REVIEW OF SCIENTIFIC INSTRUMENTSWoS-id: 000300594900080
Scopus-id: 2-s2.0-84859181548
47
32Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substratesCoautor: Ullrich B., Steenbergen E.H., Nunna K., Ouyang L., et al.2012JOURNAL OF VACUUM SCIENCE & TECHNOLOGY BWoS-id: 000302219500007
Scopus-id: 2-s2.0-84861638917
2332
33Fourier spectroscopy on PbS quantum dots1ᵉʳ autor: Ullrich B., Wang J.S., Xiao X.Y., Brown G.J.2012OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000302639200005
Scopus-id: 2-s2.0-84859640197
510
34Semiconductor band gap localization via Gaussian function1ᵉʳ autor: Ullrich B., Brown G.J., Xi H.2012SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000309111800018
Scopus-id: 2-s2.0-84866330141
1514
35Photoluminescence under high-electric field of PbS quantum dots1ᵉʳ autor: Ullrich B., Wang J.S., Brown G.J.2012AIP ADVANCESWoS-id: 000312828700045
Scopus-id: 2-s2.0-84871895932
109
36PbS nanoparticles: Synthesis, supercritical fluid deposition, and optical studies2ᵒ autor: Ullrich B., Wang J.S., Brown G.J.2012Materials Research Society Symposium ProceedingsScopus-id: 2-s2.0-84867518485
01
37Emission of precipitation deposited PbS quantum dots on polyethylene terephthalate1ᵉʳ autor: Ullrich B., Markelonis A.R., Wang J.S., Brown G.J.2012Materials Research Society Symposium ProceedingsScopus-id: 2-s2.0-84938316824
00
38Analysis of thermal band gap variations of PbS quantum dots by Fourier transform transmission and emission spectroscopy1ᵉʳ autor: Ullrich B., Wang J.S., Brown G.J.2011APPLIED PHYSICS LETTERSWoS-id: 000294359100013
Scopus-id: 2-s2.0-80052401525
2836
39Doping of GaAs by laser ablated ZnTe1ᵉʳ autor: Ullrich B., Brown G.J.2011APPLIED PHYSICS LETTERSWoS-id: 000294489300003
Scopus-id: 2-s2.0-80052528683
00
40Erratum: Analysis of thermal band gap variations of PbS quantum dots by Fourier transform transmission and emission spectroscopy (Applied Physics Letters (2011) 99 (081901))1ᵉʳ autor: Ullrich B., Wang J.S., Brown G.J.2011APPLIED PHYSICS LETTERSWoS-id: 000296659400106
Scopus-id: 2-s2.0-80855141570
11
41Lead sulfide quantum dot synthesis, deposition, and temperature dependence studies of the Stokes shift2ᵒ autor: Ullrich B., Wang J.S., Brown G.J.2011Materials Research Society Symposium ProceedingsScopus-id: 2-s2.0-84879495820
04
42Structural, compositional, and optoelectronic properties of thin-film CdS on p-GaAs prepared by pulsed-laser depositionCoautor y autor de correspondencia: Ullrich B., Acharya K.P., Mahalingam K.2010Thin Solid FilmsWoS-id: 000274887000006
Scopus-id: 2-s2.0-73949154881
3231
43Magneto-optics of InAs/GaSb superlattices2ᵒ autor: Ullrich B., Haugan H.J., Elhamri S., Szmulowicz F., et al.2010JOURNAL OF APPLIED PHYSICSWoS-id: 000277303200013
Scopus-id: 2-s2.0-77952334457
2510
44Optical and electrical quality improvements of undoped InAs/GaSb superlattices2ᵒ autor: Ullrich B., Haugan H.J., Grazulis L., Elhamri S., et al.2010JOURNAL OF VACUUM SCIENCE & TECHNOLOGY BWoS-id: 000278182700055
Scopus-id: 2-s2.0-77953001164
68
45Synthesis of PbS/TiO2 colloidal heterostructures for photovoltaic applicationsCoautor: Ullrich B., Acharya K.P., Hewa-Kasakarage N.N., Alabi T.R., et al.2010JOURNAL OF PHYSICAL CHEMISTRY CWoS-id: 000280070900019
Scopus-id: 2-s2.0-77954928731
8181
46Erratum: Synthesis of PbS/TiO2 colloidal heterostructures for photovoltaic applications (The Journal of Physical Chemistry C (2010) 114 (18291))Coautor: Ullrich B., Acharya K.P., Hewa-Kasakarage N.N., Alabi T.R., et al.2010JOURNAL OF PHYSICAL CHEMISTRY CWoS-id: 000283110700040
Scopus-id: 2-s2.0-77958566199
24
47Pulsed laser deposition of graphite counter electrodes for dye-sensitized solar cellsCoautor: Ullrich B., Acharya K.P., Khatri H., Marsillac S., et al.2010APPLIED PHYSICS LETTERSWoS-id: 000284545200008
Scopus-id: 2-s2.0-78649312074
3336
48Photocurrent theory based on coordinate dependent lifetime1ᵉʳ autor: Ullrich B., Xi H.2010OPTICS LETTERSWoS-id: 000284832200018
Scopus-id: 2-s2.0-78650831440
43
49Type-II superlattice materials research at the Air Force Research LaboratoryCoautor: Ullrich B., Brown G.J., Elhamri S., Smith H.E., et al.2010OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000285545300049
Scopus-id: 2-s2.0-79953717775
11
50Photoluminescence of PbS quantum dots on semi-insulating GaAs1ᵉʳ autor: Ullrich B., Xiao X.Y., Brown G.J.2010JOURNAL OF APPLIED PHYSICSScopus-id: 2-s2.0-77955202243
027
51Responsivity properties of ZnTe/GaAs heterostructures formed with pulsed-laser depositionCoautor y autor de correspondencia: Ullrich B., Acharya K.P., Erlacher A.2009SOLAR ENERGY MATERIALS AND SOLAR CELLSWoS-id: 000261816600007
Scopus-id: 2-s2.0-55949136935
12
52Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectorsCoautor: Ullrich B., Haugan H.J., Elhamri S., Szmulowicz F., et al.2009JOURNAL OF CRYSTAL GROWTHWoS-id: 000265659300067
Scopus-id: 2-s2.0-63349100708
1615
53Physical characterization of n-GaAs on p-Si formed by low-temperature pulsed-laser depositionCoautor y autor de correspondencia: Ullrich B., Acharya K.P., Khatri H.2009JOURNAL OF APPLIED PHYSICSWoS-id: 000266500100060
Scopus-id: 2-s2.0-66549122376
55
54Room temperature photoluminescence of amorphous GaAs1ᵉʳ autor: Ullrich B., Brown G.J.2009MATERIALS LETTERSWoS-id: 000271370600028
Scopus-id: 2-s2.0-70349229147
55
55Control of residual background carriers in undoped mid-infrared InAs/GaSb superlatticesCoautor: Ullrich B., Haugan H.J., Elhamri S., Mitchel W.C., et al.2009OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000285747500031
Scopus-id: 2-s2.0-62449333147
49
56Photonic digitizing and pattern alteration with flexible CdS and GaAs film surfacesCoautor y autor de correspondencia: Ullrich B., Liyanage C., Acharya K.2009JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICSScopus-id: 2-s2.0-60549089209
00
57Study of residual background carriers in midinfrared InAsGaSb superlattices for unfcooled detector operationCoautor: Ullrich B., Haugan H.J., Elhamri S., Szmulowicz F., et al.2008APPLIED PHYSICS LETTERSWoS-id: 000253540500002
Scopus-id: 2-s2.0-39749109634
5957
58Responsivity modulation of thin-film CdS by means of lock-in technique2ᵒ autor y autor de correspondencia: Ullrich B., Acharya K.P.2008OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000254739000021
Scopus-id: 2-s2.0-41149142852
13
59Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition1ᵉʳ autor: Ullrich B., Erlacher A., Smith H.E., Mitchel W.C., et al.2008JOURNAL OF PHYSICS-CONDENSED MATTERWoS-id: 000254786600019
Scopus-id: 2-s2.0-42549116629
32
60Optoelectronic properties of ZnTe/Si heterostructures formed by nanosecond laser deposition at different Nd:YAG laser linesCoautor y autor de correspondencia: Ullrich B., Acharya K.P., Erlacher A.2007Thin Solid FilmsWoS-id: 000244825100127
Scopus-id: 2-s2.0-33846924814
3839
61Short-period InAs/GaSb superlattices for mid-infrared photodetectorsCoautor: Ullrich B., Haugan H.J., Szmulowicz F., Brown G.J., et al.2007Physica Status Solidi C-Current Topics in Solid State PhysicsWoS-id: 000246508900027
Scopus-id: 2-s2.0-45149105658
1111
62CdS thin films formed on flexible plastic substrates by pulsed-laser depositionCoautor: Ullrich B., Acharya K.P., Skuza J.R., Lukaszew R.A., et al.2007JOURNAL OF PHYSICS-CONDENSED MATTERWoS-id: 000246567300029
Scopus-id: 2-s2.0-34248639024
3738
63Thin-film CdS formed with pulsed-laser deposition towards optical and hybrid device applications1ᵉʳ autor y autor de correspondencia: Ullrich B.2007JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSWoS-id: 000248865000005
Scopus-id: 2-s2.0-34548155011
1111
64Photoluminescence analysis of p-doped GaAs using the Roosbroeck-Shockley relation1ᵉʳ autor: Ullrich B., Munshi S.R., Brown G.J.2007SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000249756000016
Scopus-id: 2-s2.0-34748884434
2527
65Responsivity of ZnTen-GaAs heterostructures formed by infrared nanosecond laser deposition2ᵒ autor: Ullrich B., Acharya K.P., Erlacher A.2007JOURNAL OF APPLIED PHYSICSWoS-id: 000250147700008
Scopus-id: 2-s2.0-35348900137
77
66Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition2ᵒ autor: Ullrich B., Erlacher A., Komarova E.Y., Jaeger H., et al.2006JOURNAL OF NON-CRYSTALLINE SOLIDSWoS-id: 000234963000016
Scopus-id: 2-s2.0-30344465026
1112
67Short period superlattices: Is thinner better?Coautor: Ullrich B., Brown G.J., Haugan H.J., Szmulowicz F., et al.2006OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000237277500040
Scopus-id: 2-s2.0-33646734691
37
68Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectorsCoautor: Ullrich B., Haugan H.J., Szmulowicz F., Brown G.J., et al.2006PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESWoS-id: 000237842200075
Scopus-id: 2-s2.0-33747885187
1716
69Surface and texture characterization of thin-film ZnTe formed with pulsed-laser depositionCoautor: Ullrich B., Erlacher A., Lukaszew A.R., Jaeger H.2006JOURNAL OF VACUUM SCIENCE & TECHNOLOGY AWoS-id: 000239048100132
Scopus-id: 2-s2.0-33745499967
65
70Introduction of glass/GaAs interfaces for all-optical and hybrid switch fabricsCoautor y autor de correspondencia: Ullrich B., Erlacher A., Danilov E.O.2006SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000240123200020
Scopus-id: 2-s2.0-33747246897
22
71Structural and surface analysis of thin-film ZnTe formed with pulsed-laser depositionCoautor: Ullrich B., Erlacher A., Lukaszew A.R., Jaeger H.2006SURFACE SCIENCEWoS-id: 000241450600050
Scopus-id: 2-s2.0-33749121334
2530
72Growth of short-period InAs/GaSb superlatticesCoautor: Ullrich B., Haugan H.J., Mahalingam K., Brown G.J., et al.2006JOURNAL OF APPLIED PHYSICSWoS-id: 000243157900010
Scopus-id: 2-s2.0-33846113087
3132
73Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectorsCoautor: Ullrich B., Szmulowicz F., Haugan H.J., Brown G.J., et al.2006OPTO-ELECTRON REVScopus-id: 2-s2.0-33645791231
034
74Ion-beam luminescence of thin-film CdS on glass formed by pulsed-laser depositionCoautor: Ullrich B., Khanlary M., Townsend P., Hole D.E.2005JOURNAL OF APPLIED PHYSICSWoS-id: 000226700500026
Scopus-id: 2-s2.0-19944432372
2021
75Optical gate realization by laser crossing in thin-film semiconductors on glass2ᵒ autor: Ullrich B., Erlacher A., Konopinski R.J., Haugan H.J.2005OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000229338300023
Scopus-id: 2-s2.0-21844462531
78
76Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glassCoautor: Ullrich B., Erlacher A., Ambrico M., Perna G., et al.2005APPLIED SURFACE SCIENCEWoS-id: 000230325400079
Scopus-id: 2-s2.0-19844378713
2226
77Absorption and photocurrent properties of low-temperature laser deposited thin-film GaAs on glassCoautor: Ullrich B., Erlacher A., Ambrico M., Perna G., et al.2005OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000231386300001
Scopus-id: 2-s2.0-28544433453
22
78Rectification and intrinsic photocurrent of GaAs/Si photodiodes formed with pulsed-laser deposition at 1064 nm1ᵉʳ autor: Ullrich B., Erlacher A.2005APPLIED PHYSICS LETTERSWoS-id: 000232442200015
Scopus-id: 2-s2.0-28344453676
1111
79Photosensitive hetero-pairing of p-GaAs/n-Si by pulsed-laser deposition1ᵉʳ autor: Ullrich B., Erlacher A.2005JOURNAL OF PHYSICS D-APPLIED PHYSICSWoS-id: 000233792200008
Scopus-id: 2-s2.0-27844519221
1011
80Short-period InAsGaSb type-II superlattices for mid-infrared detectorsCoautor: Ullrich B., Haugan H.J., Szmulowicz F., Mahalingam K., et al.2005APPLIED PHYSICS LETTERSWoS-id: 000234338700006
Scopus-id: 2-s2.0-29744443316
4352
81Laser crossing in thin-film GaAs for all-optical computing realizations2ᵒ autor y autor de correspondencia: Ullrich B., Erlacher A.2005OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIScopus-id: 2-s2.0-29844444930
01
82Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectorsCoautor: Ullrich B., Szmulowicz F., Haugan H.J., Brown G.J., et al.2005OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIScopus-id: 2-s2.0-32344451040
00
83Low-power all-optical switch by superposition of red and green laser irradiation in thin-film cadmium sulfide on glassCoautor y autor de correspondencia: Ullrich B., Erlacher A., Miller H.2004JOURNAL OF APPLIED PHYSICSWoS-id: 000189139600115
Scopus-id: 2-s2.0-1642368174
3641
84All-optical digitizing of laser transmission through thin-film GaAs on glass2ᵒ autor y autor de correspondencia: Ullrich B., Erlacher A.2004SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000220420500001
Scopus-id: 2-s2.0-1642333959
1818
85Optoelectronic multiplexer realization by a GaAs/Si hetero-structure formed by pulsed-laser deposition1ᵉʳ autor: Ullrich B., Erlacher A., Gerasimov T.G., Komarova E.Y., et al.2004OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000223199200003
Scopus-id: 2-s2.0-4344629681
55
86The formation of GaAs/Si photodiodes by pulsed-laser deposition1ᵉʳ autor: Ullrich B., Erlacher A., Jaeger H.2004OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000223331300040
Scopus-id: 2-s2.0-5444226468
55
87X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser depositionCoautor: Ullrich B., Erlacher A., Ambrico M., Capozzi V., et al.2004SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000225426300019
Scopus-id: 2-s2.0-9244226545
1418
88Switch performance and electronic nature of photonic laser digitizing through thin GaAs films on glass1ᵉʳ autor: Ullrich B., Erlacher A., Danilov E.O.2004SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000225659400001
Scopus-id: 2-s2.0-10444226579
1112
89Analysis of single- and two-photon-excited green emission spectra of thin-film cadmium sulfide1ᵉʳ autor: Ullrich B., Yano S., Schroeder R., Sakai H.2003JOURNAL OF APPLIED PHYSICSWoS-id: 000180702400011
Scopus-id: 2-s2.0-0037443012
1514
90High-electric-field photocurrent in thin-film ZnS formed by pulsed-laser depositionCoautor: Ullrich B., Yano S., Schroeder R., Sakai H.2003APPLIED PHYSICS LETTERSWoS-id: 000181801100010
Scopus-id: 2-s2.0-0037474947
2431
91In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy1ᵉʳ autor: Ullrich B., Schroeder R., Knigge A., Zorn M., et al.2003OPTICAL ENGINEERINGWoS-id: 000182194200039
Scopus-id: 2-s2.0-0038002918
00
92Absorption and photocurrent properties of thin ZnS films formed by pulsed-laser deposition on quartzCoautor: Ullrich B., Yano S., Schroeder R., Sakai H.2003Thin Solid FilmsWoS-id: 000182542400023
Scopus-id: 2-s2.0-0037439472
7683
93Preparation of thin film GaAs on glass by pulsed-laser deposition1ᵉʳ autor: Ullrich B., Erlacher A., Yano S., Schroeder R., et al.2003OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000184964100020
Scopus-id: 2-s2.0-0345293245
2022
94Excitation induced emission color change in conjugated polymersCoautor: Ullrich B., Schroeder R., Wilson J.N., Bunz U.H.F.2003JOURNAL OF PHYSICAL CHEMISTRY BWoS-id: 000185990200007
Scopus-id: 2-s2.0-0242657870
78
95Identity of green single- and two-photon excited interband emission in thin film CdS on glass2ᵒ autor y autor de correspondencia: Ullrich B., Yano S.2003Thin Solid FilmsWoS-id: 000186244700043
Scopus-id: 2-s2.0-0142011458
34
96Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition1ᵉʳ autor: Ullrich B., Schroeder R., Sakai H., Zhang A., et al.2002APPLIED PHYSICS LETTERSWoS-id: 000173278400006
Scopus-id: 2-s2.0-79956031263
1519
97Intrachain exciton quenching analysis in conjugated polymers by two-photon spectroscopyCoautor: Ullrich B., Schroeder R., Graupner W., Scherf U.2002JOURNAL OF CHEMICAL PHYSICSWoS-id: 000173853600032
Scopus-id: 2-s2.0-0037154594
1213
98Photovoltaic hybrid device with broad tunable spectral response achieved by organic/inorganic thin-film heteropairing2ᵒ autor y autor de correspondencia: Ullrich B., Schroeder R.2002APPLIED PHYSICS LETTERSWoS-id: 000176599600056
Scopus-id: 2-s2.0-79956049223
1717
99Two-photon excited emission probing of thin film CdS formed by various techniques1ᵉʳ autor: Ullrich B., Schroeder R.2002OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000176913700026
Scopus-id: 2-s2.0-0036058360
11
100Hybrid bistable device realization based on lock-in technique1ᵉʳ autor y autor de correspondencia: Ullrich B.2002SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000177094900002
Scopus-id: 2-s2.0-0036641325
44
101Intensity dependence of two-photon absorption in CdS measured by photoluminescence excited by femtosecond laser pulses2ᵒ autor y autor de correspondencia: Ullrich B., Dushkina N.M.2002OPTICAL ENGINEERINGWoS-id: 000178195300040
Scopus-id: 2-s2.0-0036754558
77
102Femtosecond excitation cavity studies and superluminescence by two-photon absorption in vertical cavity lasers at 300 KCoautor: Ullrich B., Schroeder R., Knigge A., Zorn M., et al.2002PHYSICAL REVIEW BWoS-id: 000180319200038
Scopus-id: 2-s2.0-85038916579
10
103Optical properties of ZnxCd1-xS mixed crystal thin film produced by PLDCoautor: Ullrich B., Sakai H., Watanabe M., Takiyama K.2002OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIWoS-id: 000181979300049
Scopus-id: 2-s2.0-0037621910
10
104Optoelectronic junction devices based on organic/inorganic hetero-paired semiconductors2ᵒ autor y autor de correspondencia: Ullrich B., Schroeder R.2002Materials Research Society Symposium ProceedingsScopus-id: 2-s2.0-0036045640
00
105Bulk emission and interface probing of thin film CdS by two-photon spectroscopy1ᵉʳ autor: Ullrich B., Schroeder R.2002CHEMICAL PHYSICSScopus-id: 2-s2.0-0036604071
12
106Absorption and subsequent emission saturation of two-photon excited materials: Theory and experiment2ᵒ autor y autor de correspondencia: Ullrich B., Schroeder R.2002OPTICS LETTERSScopus-id: 2-s2.0-0036682533
030
107Femtosecond excitation cavity studies and superluminescence by two-photon absorption in vertical cavity lasers at 300 KCoautor: Ullrich B., Schroeder R., Knigge A., Zorn M., et al.2002PHYSICAL REVIEW BScopus-id: 2-s2.0-0037116013
01
108Optoelectronic properties of thin film CdS formed by ultraviolet and infrared pulsed-laser deposition1ᵉʳ autor: Ullrich B., Sakai H., Segawa Y.2001Thin Solid FilmsWoS-id: 000167666600032
Scopus-id: 2-s2.0-0035312043
92102
109Excitation density and photoluminescence studies of polyfluorene excited by two-photon absorption2ᵒ autor: Ullrich B., Schroeder R., Graupner W., Scherf U.2001JOURNAL OF PHYSICS-CONDENSED MATTERWoS-id: 000168589000002
Scopus-id: 2-s2.0-0035937948
2124
110The influence of self-absorption on the photoluminescence of thin film CdS demonstrated by two-photon absorption1ᵉʳ autor: Ullrich B., Schroeder R., Graupner W., Sakai H.2001OPTICS EXPRESSWoS-id: 000170203300001
Scopus-id: 2-s2.0-0000028287
2631
111Green emission and bandgap narrowing due to two-photon excitation in thin film CdS formed by spray pyrolysis1ᵉʳ autor: Ullrich B., Schroeder R.2001SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000170465700001
Scopus-id: 2-s2.0-0035422590
1112
112Green single- and two-photon gap emission of thin-film CdS formed by infrared pulsed-laser deposition on glass1ᵉʳ autor: Ullrich B., Schroeder R.2001IEEE JOURNAL OF QUANTUM ELECTRONICSWoS-id: 000171240100016
Scopus-id: 2-s2.0-0035475002
3638
113Intrinsic gap emission and its geometry dependence of thin-film CdS excited by two-photon absorption1ᵉʳ autor: Ullrich B., Schroeder R., Sakai H.2001SEMICONDUCTOR SCIENCE AND TECHNOLOGYWoS-id: 000172679500001
Scopus-id: 2-s2.0-0035661188
1313
114Two-photon absorption properties of soluble fluorene-based conjugated polymersCoautor: Ullrich B., Schroeder R., Graupner W., Scherf U.2001Materials Research Society Symposium ProceedingsScopus-id: 2-s2.0-0035559595
00
115Active layer characterization of GaInP vertical cavity surface-emitting lasers using two-photon femtosecond excitation1ᵉʳ autor: Ullrich B., Schroeder R.2001Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOSScopus-id: 2-s2.0-0035656569
00
116Optical and photoelectrical properties of oriented ZnO films2ᵒ autor: Ullrich B., Tomm J.W., Qiu X.G., Segawa Y., et al.2000JOURNAL OF APPLIED PHYSICSWoS-id: 000084992500038
Scopus-id: 2-s2.0-0000528594
3536
117Reflection properties of oriented thin CdS films formed by laser ablation2ᵒ autor: Ullrich B., Dushkina N.M., Sakai H., Segawa Y., et al.2000Thin Solid FilmsWoS-id: 000085418600035
Scopus-id: 2-s2.0-0034140999
1819
118Photoluminescence and lasing of thin CdS films on glass formed by pulsed-laser-deposition1ᵉʳ autor: Ullrich B., Bagnall D.M., Sakai H., Segawa Y.2000JOURNAL OF LUMINESCENCEWoS-id: 000086818000351
Scopus-id: 2-s2.0-0033736891
4447
119Micro-cavity lasing of optically excited CdS thin films at room temperature2ᵒ autor: Ullrich B., Bagnall D.M., Sakai H., Segawa Y.2000JOURNAL OF CRYSTAL GROWTHWoS-id: 000087873200212
Scopus-id: 2-s2.0-0033715066
2125
120Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition1ᵉʳ autor: Ullrich B., Tomm J.W., Dushkina N.M., Tomm Y., et al.2000SOLID STATE COMMUNICATIONSWoS-id: 000088873200007
Scopus-id: 2-s2.0-0034249686
2424
121Absorption dichroism of thin CdS films formed by pulsed-laser deposition1ᵉʳ autor: Ullrich B., Sakai H.2000Ieee International Symposium On Compound Semiconductors, ProceedingsScopus-id: 2-s2.0-0034425167
00
122Photoluminescence properties of thin CdS films on glass formed by laser ablation1ᵉʳ autor: Ullrich B., Bagnall D.M., Sakai H., Segawa Y.1999SOLID STATE COMMUNICATIONSWoS-id: 000079301200005
Scopus-id: 2-s2.0-0032631357
6163
123Tribological behavior of high-density polyethylene in dry sliding contact with ion-implanted CoCrMoCoautor: Ullrich B.M., Kehler B.A., Baker N.P., Lee D.H., et al.1999SURFACE & COATINGS TECHNOLOGYWoS-id: 000080573800004
Scopus-id: 2-s2.0-0033590902
912
124Microcavity lasing of optically excited cadmium sulfide thin films at room temperature2ᵒ autor: Ullrich B., Bagnall D.M., Qiu X.G., Segawa Y., et al.1999OPTICS LETTERSWoS-id: 000082832000008
Scopus-id: 2-s2.0-0001289203
2323
125Influence of hydrogen passivation of silicon on the photocurrent of CdS/Si heterodiodes1ᵉʳ autor: Ullrich B., Löher T., Segawa Y., Kobayashi T.1999MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALSWoS-id: 000083958900002
Scopus-id: 2-s2.0-0342656558
56
126Influence of the c-axis orientation on the optical properties of thin CdS films formed by laser ablation2ᵒ autor: Ullrich B., Dushkina N.M., Sakai H., Eiju T., et al.1999OPTICS, PHOTONICS, AND DIGITAL TECHNOLOGIES FOR IMAGING APPLICATIONS VIIIScopus-id: 2-s2.0-0032656656
02
127Room-temperature green luminescence and lasing of thin CdS films on glass formed by pulsed-laser-deposition1ᵉʳ autor: Ullrich B., Bagnall D.M., Sakai H., Segawa Y.1999Pacific Rim Conference On Lasers And Electro-Optics, Cleo - Technical DigestScopus-id: 2-s2.0-0033351913
00
128Texture and microstructural evolution of thin silver films in Ag/Ti bilayersCoautor: Ullrich B.M., Zeng Y., Alford T.L., Zou Y.L., et al.1998JOURNAL OF APPLIED PHYSICSWoS-id: 000071509000024
Scopus-id: 2-s2.0-0000938331
2424
129Angular dependence of the reflectance and transmittance of CdS films formed by laser ablation2ᵒ autor y autor de correspondencia: Ullrich B., Dushkina N.M.1998APPLIED PHYSICS LETTERSWoS-id: 000073256700028
Scopus-id: 2-s2.0-0005649433
44
130Optical and hybrid properties of the ZnSe/InSe/Si heterojunction1ᵉʳ autor: Ullrich B., Koma A., Löher T., Kobayashi T.1998SOLID STATE COMMUNICATIONSWoS-id: 000074407300002
Scopus-id: 2-s2.0-0032090007
1313
131Comparison of the photocurrent of ZnSe/InSe/Si and ZnSe/Si heterojunctions1ᵉʳ autor y autor de correspondencia: Ullrich B.1998MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALSWoS-id: 000076892800010
Scopus-id: 2-s2.0-0032475649
2120
132Influence of thermal and electronic modifications of the GaAs bandgap on bistable luminescent light emitted from a thin CdS film1ᵉʳ autor y autor de correspondencia: Ullrich B.1998Thin Solid FilmsWoS-id: 000077337100023
Scopus-id: 2-s2.0-0032202455
11
133The influence of the laser fluence on the transmission features of thin CdS films formed by laser ablation1ᵉʳ autor: Ullrich B., Sakai H., Dushkina N.M., Ezumi H., et al.1998MICROELECTRONIC ENGINEERINGScopus-id: 2-s2.0-0001014378
016
134Crystal direction of CdS thin film produced by laser ablationCoautor: Ullrich B., Sakai H., Tamaru T., Sumomogi T., et al.1998JAPANESE JOURNAL OF APPLIED PHYSICSScopus-id: 2-s2.0-0032118879
036
135Novel hybrid device by interaction of chopped light with a laser beam in a CdS crystal1ᵉʳ autor: Ullrich B., Dushkina N.M., Kobayashi T.1997Pacific Rim Conference On Lasers And Electro-Optics, Cleo - Technical DigestScopus-id: 2-s2.0-0030652195
01
136Excitonic emission enhancement by directional carrier injection in a ZnSe/Zn0.78Cd0.22Se multi-superlattice2ᵒ autor: Ullrich B., Guan Z.P., Zheng Q.B., Kobayashi T.1997SOLID STATE COMMUNICATIONSWoS-id: A1997WJ70100005
Scopus-id: 2-s2.0-0031097541
22
137The effect of the substrate on the emission features of thin CdS films formed by laser ablation1ᵉʳ autor: Ullrich B., Sakai H., Dushkina N.M., Ezumi H., et al.1997MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALSWoS-id: A1997XM39900017
Scopus-id: 2-s2.0-0031164266
1514
138Bleaching and spectral shape modification of CdS photocurrent due to He-Ne laser pumping1ᵉʳ autor: Ullrich Bruno, Dushkina Natalia Mitkova, Kobayashi Takayoshi1997JAPANESE JOURNAL OF APPLIED PHYSICSScopus-id: 2-s2.0-0031167419
05
139Dependence of the photocurrent on a bias of a p-InP/n-CdS heterojunction formed by laser ablation1ᵉʳ autor: Ullrich B., Dushkina N.M., Ezumi H., Keitoku S., et al.1997SOLID STATE COMMUNICATIONSScopus-id: 2-s2.0-0031237295
03
140A comparative study of refractory metal nitridation in an NH3 ambientCoautor: Ullrich B.M., Zou Y.L., Alford T.L., Zeng Y., et al.1997Thin Solid FilmsScopus-id: 2-s2.0-0031248471
02
141Comparison of bistable light emission of a thin CdS:Cu film measured in reflection and transmission geometry1ᵉʳ autor: Ullrich B., Sasaki M., Kobayashi T.1997OPT REVWoS-id: A1997YG73600006
Scopus-id: 2-s2.0-0031317216
00
142Analysis of residual stress in polycrystalline silver thin films by x-ray diffractionCoautor: Ullrich B.Manfred, Alford T.L., Zeng Yuxiao, Zou Y.L, et al.1997Materials Research Society Symposium ProceedingsScopus-id: 2-s2.0-0031353980
00
143Influence of underlayer and encapsulation process on texture in polycrystalline silver thin filmsCoautor: Ullrich B.Manfred, Zeng Yuxiao, Zou Y.L., Alford T.L., et al.1997Materials Research Society Symposium ProceedingsScopus-id: 2-s2.0-0031359276
00
144Formation of titanium nitride by annealing Ag/Ti structures in ammonia ambientCoautor: Ullrich B.M., Zou Y.L., Alford T.L., Zeng Y., et al.1997JOURNAL OF APPLIED PHYSICSWoS-id: A1997XY05700022
Scopus-id: 2-s2.0-0038273488
1716
145Temperature dependence of reflectance and transmittance at 514.5 nm of CdS films formed by laser ablation1ᵉʳ autor: Ullrich B., Ezumi H., Keitoku S., Kobayashi T.1996APPLIED PHYSICS LETTERSWoS-id: A1996UL63200023
Scopus-id: 2-s2.0-0000748974
88
146ZnSe-Zn0.78Cd0.22Se multi-superlattice structure for effective optical pumping and multicolor emission2ᵒ autor: Ullrich B., Guan Z.P., Zheng Q.-B., Kobayashi T.1996JAPANESE JOURNAL OF APPLIED PHYSICSWoS-id: A1996VV23900005
Scopus-id: 2-s2.0-0030291697
22
147Demonstration of the independence of absorptive all-optical bistabilities in reflection and luminescence1ᵉʳ autor: Ullrich B., Kazlauskas A., Kobayashi T.1995APPLIED PHYSICS LETTERSWoS-id: A1995QN76700006
Scopus-id: 2-s2.0-0029271188
66
148All-optical material characterization techniques and optical data links by the application of bistability in luminescence1ᵉʳ autor: Ullrich B., Misawa K., Kobayashi T., Kazlauskas A.1995PHYSICA SCRIPTAWoS-id: A1995QR92500017
Scopus-id: 2-s2.0-0029290646
22
149Transmittance bistability of cds at 632.8 nm induced by the 514.5 nm line1ᵉʳ autor: Ullrich B., Ezumi H., Misawa K., Keitoku S., et al.1995JAPANESE JOURNAL OF APPLIED PHYSICSWoS-id: A1995TE37100009
Scopus-id: 2-s2.0-0029408751
11
150All-optical bistability of ZnSe films on quartz1ᵉʳ autor: Ullrich Bruno, Zerlauth Stefan, Kobayashi Takayoshi1995Molecular Crystals And Liquid Crystals Science And Technology Section B: Nonlinear OpticsScopus-id: 2-s2.0-0029489817
00
151Luminescence properties pf p-type thin CdS films prepared by laser ablation1ᵉʳ autor: Ullrich B., Ezumi H., Keitoku S., Kobayashi T.1995MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALSWoS-id: A1995TM63000024
Scopus-id: 2-s2.0-0029545860
1415
152All-optical material characterization method by the application of bistability in luminescence2ᵒ autor: Ullrich B., Kazlauskas A., Misawa K., Kobayashi T.1995Materials Science ForumScopus-id: 2-s2.0-17744400901
00
153A New Architecture for Optical Data Processing Devices by the Application of Bistability in Luminescence1ᵉʳ autor: Ullrich B., Kobayashi T.1995OPT REVWoS-id: A1995RW68800011
Scopus-id: 2-s2.0-33747210587
11
154All-Optical Bistabilities in Reflection and Luminescence of Thin ZnSe Films1ᵉʳ autor: Ullrich B., Kobayashi T.1995OPT REVWoS-id: A1995TU38700002
Scopus-id: 2-s2.0-84951607994
00
155Dynamics of the operating point of a bistable system as shown by non-coincident bistable switching in transmission and reflection of thin CdS layers1ᵉʳ autor: Ullrich Bruno, Zerlauth Stefan1994Molecular Crystals And Liquid Crystals Science And Technology Section B: Nonlinear OpticsScopus-id: 2-s2.0-0027961997
06
156Possibility of analyzing the type of impurities in semiconductors by application of bistability in luminescence1ᵉʳ autor: Ullrich B., Misawa K., Kobayashi T., Kazlauskas A., et al.1994JAPANESE JOURNAL OF APPLIED PHYSICSWoS-id: A1994NQ76600005
Scopus-id: 2-s2.0-0028459607
65
157All-optical absorptive and dispersive bistabilities in luminescence of a thin Cds film1ᵉʳ autor: Ullrich B., Kobayashi T.1994JAPANESE JOURNAL OF APPLIED PHYSICSWoS-id: A1994PR30000005
Scopus-id: 2-s2.0-0028539334
33
158Phenomenon of bistability in luminescence2ᵒ autor: Ullrich B., Kazlauskas A., Zerlauth S.1994MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALSWoS-id: A1994PZ35500100
Scopus-id: 2-s2.0-0028728788
33
159All-optical bistability in luminescence of thin CdS films1ᵉʳ autor: Ullrich B., Kobayashi T.1994PHYSICA SCRIPTAWoS-id: A1994PW67200048
Scopus-id: 2-s2.0-0028744901
23
160Generation of bistable luminescence radiation by thin CdS films: experiment and theory1ᵉʳ autor: Ullrich Bruno, Kobayashi Takayoshi1994Ieee Nonlinear Optics: Materials, Fundamentals And Applications - Conference ProceedingsScopus-id: 2-s2.0-0028754301
00
161First realization of bistable light emitting devices1ᵉʳ autor: Ullrich B., Kazlauskas A., Zerlauth S., Kobayashi T.1994JOURNAL OF CRYSTAL GROWTHWoS-id: A1994NN99700044
Scopus-id: 2-s2.0-0028760674
99
162Laser spot temperature determination of highly excited thin CdS films1ᵉʳ autor y autor de correspondencia: Ullrich Bruno1993Molecular Crystals And Liquid Crystals Science And Technology Section B: Nonlinear OpticsScopus-id: 2-s2.0-0027202995
02
163Self-induced transmission and luminescence oscillations in thin CdS films1ᵉʳ autor y autor de correspondencia: Ullrich B.1993PHYSICA B-CONDENSED MATTERWoS-id: A1993LA92600049
Scopus-id: 2-s2.0-0027575903
55
164Photoelectronic properties of YBa2Cu3O61ᵉʳ autor: Ullrich Bruno, Kulac Ibrahim, Pint Harald1993CANADIAN JOURNAL OF PHYSICSWoS-id: A1993MN44500004
Scopus-id: 2-s2.0-0027701772
00
165New concepts for material characterizations and optical devices: Positive and negative hybrid logics and self-induced photonic oscillators1ᵉʳ autor y autor de correspondencia: Ullrich B.1993JAPANESE JOURNAL OF APPLIED PHYSICSWoS-id: A1993KT42500017
Scopus-id: 2-s2.0-84912919610
22
166Photocurrent in thin YBa2Cu3O6 films on sapphire1ᵉʳ autor: Ullrich Bruno, Kuiac Ibrahim, Pint Harald, Leising Guenther, et al.1992JAPANESE JOURNAL OF APPLIED PHYSICSScopus-id: 2-s2.0-0026896979
02
167Blue electroluminescent device based on a conjugated polymerCoautor: Ullrich B., Grem G., Leditzky G., Leising G.1992SYNTHETIC METALSWoS-id: A1992JW41900049
Scopus-id: 2-s2.0-0026912141
158174
168A newly observed effect: He-Ne laser transmission modulation performed with epitaxial and sprayed thin CdS films1ᵉʳ autor: Ullrich B., Bouchenaki C., Roth S., Heller C., et al.1992JOURNAL OF CRYSTAL GROWTHWoS-id: A1992HM05800178
Scopus-id: 2-s2.0-0027108326
44
169Bistable optical device realization with thin Cds films1ᵉʳ autor: Ullrich B., Bouchenaki C., Roth S., Leising G.1992JOURNAL OF CRYSTAL GROWTHWoS-id: A1992HM05800182
Scopus-id: 2-s2.0-0027108343
33
170Realization of a blue-light-emitting device using poly(p-phenylene)Coautor: Ullrich B., Grem G., Leditzky G., Leising G.1992ADVANCED MATERIALSWoS-id: A1992HB33900006
Scopus-id: 2-s2.0-0142076962
9771007
171Photocurrent in thin yba2cu3o6 films on sapphire1ᵉʳ autor: Ullrich B., Kula\cc I., Pint H., Leising G., et al.1992JAPANESE JOURNAL OF APPLIED PHYSICSWoS-id: A1992JG12100014
Scopus-id: 2-s2.0-84957153116
32
172Luminescence investigations performed on differently prepared thin CdS layers2ᵒ autor: Ullrich B., Bouchenaki C., Zielinger J.P.1991JOURNAL OF LUMINESCENCEWoS-id: A1991FC74600046
Scopus-id: 2-s2.0-0025742592
2223
173Bistable optical thin cds film devices: All-optical and optoelectronic features1ᵉʳ autor: Ullrich B., Bouchenaki C.1991JAPANESE JOURNAL OF APPLIED PHYSICSWoS-id: A1991FY67400021
Scopus-id: 2-s2.0-0026185967
4140
174Optical gate realization with thin CdS films1ᵉʳ autor: Ullrich B., Bouchenaki C., Roth S.1991Applied Physics A Solids And SurfacesWoS-id: A1991GV78500010
Scopus-id: 2-s2.0-0026391721
1414
175A thin film CdS-self-electro-optic effect device with identically contrasted (0.95/1) optical and electro-optical loops at 210 K1ᵉʳ autor: Ullrich B., Bouchenaki C., Zielinger J.P., Cong H.N., et al.1991JOURNAL OF APPLIED PHYSICSWoS-id: A1991FM77100090
Scopus-id: 2-s2.0-36449000968
55
176Preparation, characterization, and bistable photoconduction properties of thin cds layers2ᵒ autor: Ullrich, B., Bouchenaki, C., Zielinger, J.P., Chartier, P.1991JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICSWoS-id: A1991FA75100025
Scopus-id: 2-s2.0-84975604835
3737
177Observation of multiple precipitate layers in MeV Au++-implanted siliconCoautor: Ullrich B.M., Alford T.L., Theodore N.D., Fleischer E.L., et al.1990APPLIED PHYSICS LETTERSWoS-id: A1990DB07100029
Scopus-id: 2-s2.0-0001657672
1313
178Photoconduction and thermo-optical hysteresis measurements in thin CdS films2ᵒ autor: Ullrich B., Bouchenaki Ch., Zielinger J.P., Nguyen Cong H., et al.1990JOURNAL OF CRYSTAL GROWTHWoS-id: A1990DP34300158
Scopus-id: 2-s2.0-0025412723
2422
179Clockwise bistable photocurrent and inverse Franz Keldysh effect of thin CdS films2ᵒ autor: Ullrich B., Bouchenaki C., Zielinger J.P.1990American Society Of Mechanical Engineers (paper)Scopus-id: 2-s2.0-0025532384
01
180Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator1ᵉʳ autor: Ullrich B., Kuchar F., Meisels R., Olcaytug F., et al.1989Thin Solid FilmsWoS-id: A1989T527700001
Scopus-id: 2-s2.0-0024303527
23
181Infrared photocurrent in a short period sawtooth doping superlattice1ᵉʳ autor: Ullrich B., Zhang C., Brunthaler G., Klitzing K.v., et al.1989SUPERLATTICES AND MICROSTRUCTURESWoS-id: A1989T042400008
Scopus-id: 2-s2.0-0024944709
10
182Quantum-confined subband transitions of a GaAs sawtooth doping superlattice1ᵉʳ autor: Ullrich B., Zhang C., Klitzing K.V.1989APPLIED PHYSICS LETTERSWoS-id: A1989T690700020
Scopus-id: 2-s2.0-0242344023
2123
183Transmission spectroscopy on sawtooth-doping superlattices1ᵉʳ autor: Ullrich B., Zhang C., Schubert E.F., Cunningham J.E., et al.1989PHYSICAL REVIEW BWoS-id: A1989U261700040
Scopus-id: 2-s2.0-4243864753
710
184Photoresponse in a sawtooth doping superlattice1ᵉʳ autor: Ullrich B., Zhang C., Klitzing K.V.1989PHYSICA SCRIPTAScopus-id: 2-s2.0-84956113271
10
185Spatial distribution of impurities in delta-doped n-type GaAs1ᵉʳ autor: Ullrich B., Schubert E.F., Stark J.B., Cunningham J.E.1988Applied Physics A Solids And SurfacesWoS-id: A1988Q066800004
Scopus-id: 2-s2.0-0024101711
1722
186Tunable absorption in a ssV-shaped multiple-quantum-well structure1ᵉʳ autor: Ullrich B., Zhang C., Klitzing K.V.1988PHYSICAL REVIEW BWoS-id: A1988Q803200054
Scopus-id: 2-s2.0-35949011013
65
187Spatial localization of impurities in d-doped GaAsCoautor: Ullrich B., Schubert E.F., Stark J.B., Cunningham J.E.1988APPLIED PHYSICS LETTERSWoS-id: A1988N167300019
Scopus-id: 2-s2.0-36549101512
10099
188Photocurrent spectroscopy in a sawtooth doping superlattice1ᵉʳ autor: Ullrich B., Zhang C., Fronius H., Klitzing K.V.1988APPLIED PHYSICS LETTERSWoS-id: A1988N682200013
Scopus-id: 2-s2.0-36549101553
97
189Quantum-confined interband absorption in GaAs sawtooth-doping superlattices2ᵒ autor: Ullrich B., Schubert E.F., Harris T.D., Cunningham J.E.1988PHYSICAL REVIEW BWoS-id: A1988Q803200049
Scopus-id: 2-s2.0-4244135219
3637
190Icosahedral symmetry in the Al85Cr15 quasi-crystalline material formed by ion irradiationCoautor: Ullrich B.M., Lilienfeld D.A., Mayer J.W., Nastasi M., et al.1986NUOVO CIMENTO DWoS-id: A1986A172300012
Scopus-id: 2-s2.0-51649148508
42
191Ion induced reactions in Fe/Al bilayers by pulsed-beam ion irradiation and Xe implantationCoautor: Ullrich B.M., Nastasi M., Fastow R., Gyulai J., et al.1985NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMSWoS-id: A1985AGM6000026
Scopus-id: 2-s2.0-0022025969
1517
192METAL-SEMICONDUCTOR INTERFACIAL REACTION: Ni/Si SYSTEM.Coautor: Ullrich B.M., Cheung N.W., Grunthaner P.J., Grunthaner F.J., et al.1980Journal Of Vacuum Science & TechnologyWoS-id: A1981LV47200054
Scopus-id: 2-s2.0-0018999309
8481
193Epitaxial growth of Si deposited on (100) SiCoautor: Ullrich B.M., Hung L.S., Lau S.S., Von Allmen M., et al.1980APPLIED PHYSICS LETTERSWoS-id: A1980LB78500022
Scopus-id: 2-s2.0-36749107507
5454
Descargar PDF

Documentos no indexados (Humanindex)

# Título del documento ISSN Revista Año Fuente
Descargar PDF

Capítulos de libros (WoS y Scopus)

# Título del capítulo Título del libro Autores Alcance Año ISBN Fuente
1Link between debye temperature, bang gap energy, and fine structure constantUltraviolet Self-Diffraction Effects Exhibited By Ion-Implanted Au Nanoparticles In SilicaUllrich B., Xi H., Bhowmick M., Conference Paper20189781557528209Scopus-id: 2-s2.0-85059405335
2Strongly Confined PBS Quantum Dots: Emission Limiting, Photonic Doping, and Magneto-Optical EffectsStrongly Confined Pbs Quantum Dots: Emission Limiting, Photonic Doping, And Magneto-Optical EffectsReyes-Esqueda, J.A., Ullrich, B., Barik, P., et al.Capítulo de un Libro20169781119241966Scopus-id: 2-s2.0-85015230622
3Theoretical Analysis of the Spectral Photocurrent Distribution of SemiconductorsOptoelectronics - Advanced Materials And DevicesUllrich, Bruno, Xi, Haowen, Pyshkin, SL, et al.Article20139789535109228WoS-id: 000412097900009
Descargar PDF

No se encuentran registros en la base de datos de obras con ISBN (Indautor).

Descargar PDF

No se encuentran registros en la base de datos de proyectos.

Descargar PDF

No se encuentran registros en la base de datos de comités de tesis.

Descargar PDF

Docencia Impartida

# Entidad Nivel Asignatura Año Semestre Alumnos
1Instituto de FísicaMaestríaFISICA DE MATERIALES20152016-12
2Instituto de Ciencias FísicasMaestríaLABORATORIO AVANZADO20152015-21
3Instituto de Ciencias FísicasMaestríaLABORATORIO AVANZADO20142014-23
4Instituto de Ciencias FísicasMaestríaLABORATORIO AVANZADO20132014-13
Descargar PDF

No se encuentran registros en la base de datos de patentes.

Descargar PDF

No se encuentran registros en la base de datos de libros completos (Humanindex).

Descargar PDF

Capítulos de libros (Humanindex)

# Título del libro Título del capítulo ISBN Editorial Año Fuente