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Título del libro: 2013 Ieee 13th Topical Meeting On Silicon Monolithic Integrated Circuits In Rf Systems (sirf)
Título del capítulo: Fringing Gate Capacitance Model for Triple-Gate FinFET

Autores UNAM:
JULIO CESAR TINOCO MAGAÑA;
Autores externos:

Idioma:

Año de publicación:
2013
Palabras clave:

FinFETs; Extrinsic Capacitance; Fringing Gate Capacitance; Fringing Electric Field


Resumen:

In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on three-dimensional numerical simulations, is presented. The model takes into account the source/drain electrode and contact areas. It includes 5 capacitance components that describe the different fringing electrical couplings that exist inside the FinFET structure. The semi-analytical model accurately calculates the total extrinsic gate capacitance as function of the main geometrical parameters of Triple-Gate FinFET.


Entidades citadas de la UNAM: